Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC
Anatoly M. Strel’chukA.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, RussiaN.S. SavkinaA.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, RussiaAlexey N. KuznetsovA.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, RussiaA. A. LebedevA.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, RussiaA. S. TregubovaA.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, Russia
2002en
ABI
Аннотация
Аннотация мавжуд эмас.
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