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Иш: Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

1. Changes in the electronic structure of the Si surface as a result of ion implantation

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2. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

   S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

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