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Иш: Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion

1. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

   M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

   МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20243 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.001804