Ушбу иш иқтибос қилган ишлар

4 та иш

Иш: Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

1. Physics of Semiconductor Devices

   Simon M. Sze, Kwok K. Ng

   Китоб200633 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.109944

2. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

   Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

   МақолаThermography and Photoacoustic TechniquesInorganic Materials20149 иқтибос

   ABIABI:AkademIndex/openalex/2014.article.000071

3. Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

   I. B. Sapaev

   МақолаChalcogenide Semiconductor Thin FilmsSemiconductor Physics Quantum Electronics & Optoelectronics20195 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.238416

4. LED power reduction trade-offs for ambulatory pulse oximetry

   Eduardo Aguilar Pelaez, Esther Rodriguez Villegas

   Мақола20072 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.263466