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Иш: The last silicon transistor: Nanosheet devices could be the final evolutionary step for Moore's Law

1. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

   A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

   МақолаAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.001842

2. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.preprint.001199