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Иш: Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions

1. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

   S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

   МақолаIon-surface interactions and analysisCoatings20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002442