Ушбу иш иқтибос қилган ишлар

2 та иш

Иш: Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex

1. Direct-bandgap emission from hexagonal Ge and SiGe alloys

   Elham Fadaly, Alain Dijkstra, Jens Renè Suckert +17

   Мақола20206 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278128

2. Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

   Kwang-Won Jo, Wu-Kang Kim, Mitsuru Takenaka +1

   Мақола20194 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278127