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Иш: Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

1. Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

   Б.Г. Атабаев, Kh. N. Juraev, Z. Sh. Shaymardanov +2

   МақолаSilicon Carbide Semiconductor TechnologiesJournal of Applied Spectroscopy20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.002506