Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: A comparative study of the structural and optical properties of Si-doped GaAs under different ion irradiation

1. Influence of gamma doses on the optical and electrical properties of oxygen-impurity and chromium-doped GaAs

   M. Yu. Tashmetov, Abror Abdaminov

   МақолаSemiconductor Quantum Structures and DevicesJournal of Physics Condensed Matter20251 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.002520

2. Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements

   M. Yu. Tashmetov, Khabibulla Djangabaev

   МақолаSemiconductor Quantum Structures and DevicesPhysica Scripta20251 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.002581

3. Comprehensive study of GaAs(O):Cr after gamma irradiation: x-ray analysis, surface morphology, and microhardness properties

   M Yu Tashmetov, Abror Abdaminov

   МақолаRadiation Effects in ElectronicsPhysica Scripta20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.017583