Ушбу ишга иқтибос қилган ишлар

4 та иш

Иш: Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

1. Elementally specific electron–positron annihilation radiation emitted from ion cores of group-V impurity–vacancy complexes in germanium

   N.Yu. Arutyunov, V. V. Emtsev

   МақолаMuon and positron interactions and applicationsPhysica B Condensed Matter20071 иқтибос

   ABIABI:AkademIndex/openalex/2007.article.000201

2. Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

   Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +3

   МақолаMuon and positron interactions and applicationsActa Materialia20141 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.489647

3. Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion

   N.Yu. Arutyunov, V. V. Emtsev

   МақолаMuon and positron interactions and applicationsPhysica B Condensed Matter20090 иқтибос

   ABIABI:AkademIndex/openalex/2009.article.000269

4. Formation and annealing of vacancy-P complexes in proton-irradiated germanium

   Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +2

   МақолаMuon and positron interactions and applicationsActa Materialia20150 иқтибос

   ABIABI:AkademIndex/openalex/2015.article.000157