Improvement of life time of minority carriers in GaAs epi-layer grown on Ge substrate
Ken TakahashiAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanShigeki YamadaAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanRyuichi NakazonoAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanYasushi MinagawaAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanTakayuki MatsudaAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanTsunehiro UnnoAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, JapanShoji KumaAdvanced Research Center, Hitachi Cable, Ltd. 3550 Kidamari-cho, Tsuchiura-shi, Ibaraki-ken 300, Japan
1998en
ABI
Аннотация
Аннотация мавжуд эмас.
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба