Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Improvement of life time of minority carriers in GaAs epi-layer grown on Ge substrate

1. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

   А. С. Саидов, С. З. Зайнабидинов, M. U. Kalanov +2

   МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy20156 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.290699

2. Obtaining new types of compounds between silicon and cadmium sulfide

   I.B. Sapaev

   МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.009761