Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Electrical properties and recombination activity of copper, nickel and cobalt in silicon

1. Nickel-Dopant Atom Clusters and their Effect on the Recombination Properties of Silicon

   S.Z. Zaynabidinov, A. O. Kurbanov

   МақолаSilicon and Solar Cell TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences20195 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.000379

2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

   Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

   МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20052 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.235254

3. On the thermostability of electrical properties of p-Si<P, Ni> and p-Si<P, Cu>

   Sh. Makhkamov, M. Kаrimov, A. O. Kurbanov +2

   МақолаSilicon and Solar Cell TechnologiesRussian Physics Journal20051 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.500801