Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy
C.A WangLincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108, USAD.A. ShiauLincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108, USAAnn LinLincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108, USA
2003en
ABI
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