Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy

1. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

   Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

   МақолаSemiconductor materials and interfacesSemiconductors20098 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.400552

2. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

   А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

   МақолаSemiconductor materials and interfacesApplied Solar Energy20071 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.386196