Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures
А. С. СаидовPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, UzbekistanМ. С. СаидовPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, UzbekistanSh. N. UsmonovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, UzbekistanKhomidkhodzha KholikovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, UzbekistanD. V. SaparovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Uzbekistan
ABI
Аннотация
The possibility of growing a continuous solid solution of (GaSb)1 − x (Si2) x (x = 0–0.99) on single-crystalline silicon substrates by liquid-phase epitaxy from a tin solution melt is considered. The structural, volt-ampere, and spectral characteristics of the pSi-n(GaSb)1 − x (Si2) x structures are investigated.
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