Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloys
S. V. IvanovIoffe Physico-Technical Institute of RAS, 26, Politekhnicheskaya Street, St. Petersburg 194021, Russian FederationS. V. SorokinIoffe Physico-Technical Institute of RAS, 26, Politekhnicheskaya Street, St. Petersburg 194021, Russian FederationP. S. Kop’evIoffe Physico-Technical Institute of RAS, 26, Politekhnicheskaya Street, St. Petersburg 194021, Russian FederationJ.R. KimSamsung Advanced Institute of Technology, Suwon 440-600, South KoreaHyunuk JungSamsung Advanced Institute of Technology, Suwon 440-600, South KoreaHayoung ParkSamsung Advanced Institute of Technology, Suwon 440-600, South Korea
1996en
ABI
Аннотация
Аннотация мавжуд эмас.
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