Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures

1. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

   Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

   МақолаSemiconductor materials and devicesTechnical Physics20177 иқтибос

   ABIABI:AkademIndex/openalex/2017.article.000255

2. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

   Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

   МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.010337