Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Diffusion and interactions of point defects in silicon: molecular dynamics simulations

1. Electrophysical properties of Silicon doped by Nickel impurity using Diffusion method

   Sharifa B. Utamuradova

   МақолаSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research20203 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.514939

2. Annealing of radiation damage in Si. A molecular dynamics study

   Cristian D. Denton, V. Konoplev, A. Gras-Martí +1

   МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000071