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Иш: Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
Quantum corrections in the simulation of decanano MOSFETs
Asen Asenov, A. R. Brown, J.R. Watling
Мақола20034 иқтибосABILarge random telegraph noise in sub-threshold operation of nano-scale nMOSFETs
J. P. Campbell, Lihua Yu, Kin P. Cheung +4
Мақола20093 иқтибосABIPerformance estimation of junctionless multigate transistors
Chi‐Woo Lee, Isabelle Ferain, Aryan Afzalian +4
Мақола20093 иқтибосABIRTN distribution comparison for bulk, FDSOI and FinFETs devices
Louis Gerrer, Salvatore Amoroso, Razaidi Hussin +1
Мақола20143 иқтибосABI