Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

1. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   МақолаNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.452998

2. Obtaining nanoscale CoSiO/Si/CoSi₂ systems for increasing the range of light ray absorption energy

   S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

   МақолаSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20202 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213642