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Иш: KINETICS OF FORMATION OF COMPLEX DEFECTS IN SILICON DOPED WITH ZINC AND NICKEL

1. Enhancing the Perfection of a Silicon Crystal Doped with Nickel and Zinc Impurities

   Daryabay Muratbaevich Esbergenov, Elmira M. Naurzalieva, Sabirbay A. Tursinbaev

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.002749