Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: EFFECT OF ION-IMPLANTATION DAMAGE ON THE OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDE

1. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

   Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2

   МақолаIon-surface interactions and analysisEurasian journal of physics and functional materials20232 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.267071

2. Ion doping of gallium arsenide

   П. В. Павлов, E. I. Zorin, D. I. Tetelbaum

   МақолаPhase-change materials and chalcogenidesRussian Physics Journal19800 иқтибос

   ABIABI:AkademIndex/openalex/1980.article.000147