Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
J. AjayanDepartment of Electronics and Communication Engineering, Karunya University, Coimbatore, Tamilnadu, IndiaD. NirmalDepartment of Electronics and Communication Engineering, Karunya University, Coimbatore, Tamilnadu, IndiaP. PrajoonDepartment of Electronics and Communication Engineering, Karunya University, Coimbatore, Tamilnadu, IndiaJ. Charles PravinDepartment of Electronics and Communication Engineering, Karunya University, Coimbatore, Tamilnadu, India
2017en
ABI
Аннотация
Аннотация мавжуд эмас.
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба