Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

1. Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts

   Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

   МақолаSemiconductor Quantum Structures and DevicesThe European Physical Journal B20231 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.559418

2. Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

   Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

   МақолаSurface and Thin Film PhenomenaThe European Physical Journal B20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002942