Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

1. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002944

2. Composition of silicon jointly doped with impurity atoms of gallium and phosphorus

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   МақолаSilicon and Solar Cell TechnologiesПоверхность Рентгеновские синхротронные и нейтронные исследования20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.007427