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12 та иш

Иш: Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

  1. Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

    R. C. Barrett, C. F. Quate

    Мақола19915 иқтибос
    ABI

  2. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    МақолаSemiconductor materials and devicesDoklady Physics20074 иқтибос
    ABI

  3. Hi-MNOS II technology for a 64-kbit byte-erasable 5-V-only EEPROM

    Y. Yatsuda, Shinji Nabetani, Ken Uchida +5

    Мақола19853 иқтибос
    ABI

  4. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

    Ben Kaczer, J. Franco, Pieter Weckx +11

    Мақола20183 иқтибос
    ABI

  5. Read/write mechanisms and data storage system using atomic force microscopy and MEMS technology

    Hyunjung Shin, Seungbum Hong, Jooho Moon +1

    Мақола20022 иқтибос
    ABI

  6. Electrostatic force microscopy: principles and some applications to semiconductors

    Paul Girard

    Мақола20012 иқтибос
    ABI

  7. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  8. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  11. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  12. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI