The Epitaxy of ZnSe on Ge, GaAs, and ZnSe by an HCl Close-Spaced Transport Process

The epitaxial growth of is described on (111) oriented substrates of Ge, , and , using a close‐spaced transport process. Single‐ crystal layers of 1–350µ in thickness were obtained at growth rates of 0.5–160 µ/hr and substrate temperatures of 550°–680°C. Both the surface appearance and the growth rate were found to depend strongly on the substrate material. For layers grown on Ge, cracking caused by temperature coefficient differences may occur, but can generally be suppressed by using a slow cooling process. Resistivities of 103 ohm‐cm were obtained using Ga as the n‐type dopant accompanied by a zinc‐rich ambient.

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