Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: The Epitaxy of ZnSe on Ge, GaAs, and ZnSe by an HCl Close-Spaced Transport Process

1. Growth and photoelectric properties of graded-gap Si-(Si2)1−x(GaP)x heterostructures

   Б. Сапаев, А. С. Саидов, S. Dadamukhamedov

   МақолаSemiconductor Quantum Structures and DevicesTechnical Physics20041 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.386215

2. (IV2)1−x(III-V)x solid solutions obtained from a bounded tin melt-solution

   Б. Сапаев, М. С. Саидов, А. С. Саидов +1

   МақолаMaterial Science and ThermodynamicsSemiconductors20041 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.628595