Ушбу ишга иқтибос қилган ишлар

1 та иш

Иш: AFM and XRD studies of GaAs surface after anisotropic etching

1. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

   D. M. Edgorova, F. M. Ashrapov

   МақолаSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics20071 иқтибос

   ABIABI:AkademIndex/openalex/2007.article.000273