Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Isolation of junction devices in GaAs using proton bombardment

1. Ion doping of gallium arsenide

   П. В. Павлов, E. I. Zorin, D. I. Tetelbaum

   МақолаPhase-change materials and chalcogenidesRussian Physics Journal19800 иқтибос

   ABIABI:AkademIndex/openalex/1980.article.000147

2. Influence of proton irradiation on the properties of a metal (Au)-anodic oxide-gallium arsenide structure

   С. В. Тихов, В. В. Мартынов, A. N. Kalinin +1

   МақолаSemiconductor materials and interfacesRussian Physics Journal19830 иқтибос

   ABIABI:AkademIndex/openalex/1983.article.000124