Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers
Kai ChengESAT, Department of Electrical Engineering, Katholieke Universiteit Leuven, BelgiumMaarten LeysMCP/ART, IMEC, B-3001, Leuven, BelgiumStefan DegrooteMCP/ART, IMEC, B-3001, Leuven, BelgiumBenny Van DaeleEMAT, University of Antwerp, B-2020, Antwerp, BelgiumSteven BoeykensESAT, Department of Electrical Engineering, Katholieke Universiteit Leuven, BelgiumJoff DerluynMCP/ART, IMEC, B-3001, Leuven, BelgiumMarianne GermainMCP/ART, IMEC, B-3001, Leuven, BelgiumGustaaf Van TendelooEMAT, University of Antwerp, B-2020, Antwerp, BelgiumJan EngelenESAT, Department of Electrical Engineering, Katholieke Universiteit Leuven, BelgiumG. BorghsDepartment of Physics, Katholieke Universiteit Leuven, Belgium
2006en
ABI
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