Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

1. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

   D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

   ПрепринтGaN-based semiconductor devices and materialsResearch Square20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.preprint.000184

2. A new method for growing epitaxial films on foreign substrates − Bent epitaxy

   D. V. Saparov

   МақолаZnO doping and propertiesJournal of Crystal Growth20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.008412

3. Growing Perfect Single-Crystal Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaN)<sub>x</sub> Solid Solutions on Si (111) Substrates from the Liquid Phase

   А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

   МақолаGaN-based semiconductor devices and materialsActa Physica Polonica A20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.007804