Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: New Phenomenon in Narrow Germanium<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>−</mml:mo><mml:mi>n</mml:mi></mml:math>Junctions

1. Three-dimensional modeling of the relationship between static tunneling and the optical absorption coefficient in tunnel diodes

   M.K UKTAMOVA, Sh. Mamadaliev

   МақолаAdvancements in Semiconductor Devices and Circuit DesignResults in Optics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.011015

2. Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells

   A. É. Atamuratov, B. Q. Jumaboev, M. M. Khalilloev +3

   ПрепринтSemiconductor Quantum Structures and DevicesResearch Square20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.preprint.000275