H. J. Guggenheim

1 ta ish

NTT (Japan)

1. Dielectric behavior of ferroelectric BaMF4 above room temperature

   M. DiDomenico, M. Eibschütz, H. J. Guggenheim +1

   Maqola19692 iqtibos

   ABIABI:AkademIndex/2026.other.651469