V. V. Chaldyshev

4 ta ish

Fizika-Texnika Instituti

1. Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties

   M. G. Mil’vidskiĭ, V. V. Chaldyshev

   Maqola199815 iqtibos

   ABIABI:AkademIndex/2026.other.184733

2. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

   A. Kosarev, V. V. Chaldyshev, В. В. Преображенский +2

   Maqola20163 iqtibos

   ABIABI:AkademIndex/2026.other.518206

3. Calculation of photoemission characteristics of cubic K3Sb

   В. П. Киселев, V. V. Konev, V. V. Chaldyshev

   MaqolaPhotocathodes and Microchannel PlatesRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/1980.article.000108

4. Electron scattering in photoemission

   V. V. Konev, V. V. Chaldyshev

   MaqolaPhotocathodes and Microchannel PlatesRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/1980.article.000136