V. A. Glushchenko

1 ta ish

Fizika-Texnika Instituti

1. Behavior of excess currents in n-type gallium arsenide tunnel diodes

   A. P. Vyatkin, V. A. Glushchenko, R. P. Parkhomenko +1

   MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/1981.article.000120