D. K. Isamukhamedova

4 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

1. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

   S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

   MaqolaSemiconductor materials and interfacesphysica status solidi (a)19821 iqtibos

   ABIABI:AkademIndex/1982.article.000074

2. On the properties of amorphous silicon films and amorphous Si-crystalline si heterojunction

   S. A. Azimov, D. K. Isamukhamedova, P. M. Karageorgy‐Alkalaev +2

   MaqolaMaterial Science and Thermodynamicsphysica status solidi (a)19850 iqtibos

   ABIABI:AkademIndex/1985.article.000107

3. The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   MaqolaSemiconductor materials and interfacesphysica status solidi (a)19860 iqtibos

   ABIABI:AkademIndex/1986.article.000099

4. On the Theory of Majority-Carrier Silicon Solar-Cell MTIS Structures with a Schottky Barrier

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19860 iqtibos

   ABIABI:AkademIndex/1986.article.000143