С. В. Тихов

3 ta ish

Fizika-Texnika Instituti

1. Formation of defects in GaAs and Si as a result of Pd deposition onto the surface

   И. А. Карпович, С. В. Тихов, E. L. Shobolov +1

   Maqola20064 iqtibos

   ABIABI:AkademIndex/2026.other.533418

2. Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures

   С. В. Тихов, О. Н. Горшков, M. N. Koryazhkina +2

   Maqola20162 iqtibos

   ABIABI:AkademIndex/2026.other.530195

3. Influence of proton irradiation on the properties of a metal (Au)-anodic oxide-gallium arsenide structure

   С. В. Тихов, В. В. Мартынов, A. N. Kalinin +1

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19830 iqtibos

   ABIABI:AkademIndex/1983.article.000124