D.J. Roulston

1 ta ish

University of Waterloo

1. A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers

   S.C. Jain, D.J. Roulston

   Maqola19912 iqtibos

   ABIABI:AkademIndex/2026.other.277287