Z. L. Liau

1 ta ish

Massachusetts Institute of Technology

1. 3.9-μm InAsSb/AlAsSb double-heterostructure diode lasers with high output power and improved temperature characteristics

   H. K. Choi, G. W. Turner, Z. L. Liau

   Maqola19942 iqtibos

   ABIABI:AkademIndex/2026.other.526756