Yu. P. Yakovlev

1 ta ish

1. 2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

   А. Н. Баранов, A. N. Imenkov, V. V. Sherstnev +1

   Maqola19945 iqtibos

   ABIABI:AkademIndex/2026.other.609556