А. Н. Баранов
6 ta ish
Fizika-Texnika Instituti
2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
А. Н. Баранов, A. N. Imenkov, V. V. Sherstnev +1
Maqola19945 iqtibosABIPowerful mid-infrared light emitting diodes forpollution monitoring
А. А. Попов, V. V. Sherstnev, Y.P. Yakovlev +2
Maqola19974 iqtibosABIShort wavelength intersubband emission from InAs∕AlSb quantum cascade structures
D. Barate, R. Teissier, Y. Wang +1
Maqola20053 iqtibosABIHigh-density InSb-based quantum dots emitting in the mid-infrared
Vittorianna Tasco, N. Deguffroy, А. Н. Баранов +5
Maqola20063 iqtibosABINew III–V semiconductor lasers emitting near 2.6 μm
А. Н. Баранов, V. V. Sherstnev, C. Alibert +1
Maqola19962 iqtibosABIInAsSb/InAsSbP injection lasers for high-resolution spectroscopy
Yu. P. Yakovlev, А. Н. Баранов, A. N. Imenkov +3
MaqolaOchiq kirish19931 iqtibosABI