InAsSb/InAsSbP injection lasers for high-resolution spectroscopy
Yu. P. YakovlevInstitute of General Physics , Russian Academy of Sciences A. M . Iqffe Physicotechnical Institute , St. PetersburgА. Н. БарановInstitute of General Physics , Russian Academy of Sciences A. M . Iqffe Physicotechnical Institute , St. PetersburgA. N. ImenkovInstitute of General Physics , Russian Academy of Sciences A. M . Iqffe Physicotechnical Institute , St. PetersburgV. V. SherstnevInstitute of General Physics , Russian Academy of Sciences A. M . Iqffe Physicotechnical Institute , St. PetersburgЕ. В. СтепановInstitute of General Physics , Russian Academy of Sciences A. M . Iqffe Physicotechnical Institute , St. PetersburgYa. Ya. Ponurovskii
1993en
Ochiq kirishBronza
ABI
Annotatsiya
Experimental results demonstrate that tunable semiconductor injection lasers based on InAsSb/InAsSbP that emit in the spectral region λ = 3.2 to 3.4 μm can be fabricated. Lasers of this kind have been used for high-resolution molecular spectroscopy at working temperatures of 77 to 160 K. Absorption spectra obtained for methane and ethylene molecules reveal the most important spectroscopic properties of these lasers, including the range of continuous frequency tuning, the tuning rate, the spectral resolution, and the signal-to-noise ratio.
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