S.A. Lem

2 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. The radiation stimulated diffusion role in high dose, low energy, high temperature ion implantation

   S.H. Valiev, T.S. Pugacheva, F.G. Jurabekova +2

   MaqolaSilicon and Solar Cell TechnologiesNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms19971 iqtibos

   ABIABI:AkademIndex/2026.other.488712

2. The simulation of silicon doping by ion bombardment

   T.S. Pugacheva, F.G. Dzhurabekova, S.A. Lem

   MaqolaIon-surface interactions and analysis19950 iqtibos

   ABIABI:AkademIndex/1995.article.000192