В. Г. Никитин

1 ta ish

Fizika-Texnika Instituti

1. High-temperature diode formed by epitaxial GaP layers

   M. M. Sobolev, В. Г. Никитин

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000035