G. É. Cirlin

6 ta ish

Fizika-Texnika Instituti

1. Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

   Mingxing Zhang, VG Dubrovskii, N. V. Sibirev +5

   Maqola20104 iqtibos

   ABIABI:AkademIndex/2026.other.382681

2. Work function tailoring in gallium phosphide nanowires

   V. A. Sharov, P. A. Alekseev, Vladimir V. Fedorov +8

   Maqola20213 iqtibos

   ABIABI:AkademIndex/2026.other.601081

3. Inorganic photovoltaics – Planar and nanostructured devices

   Jeyakumar Ramanujam, Amit Verma, Benjamín González‐Díaz +17

   MaqolaOAOchiq kirish20162 iqtibos

   ABIABI:AkademIndex/2026.other.005326

4. Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy

   R. R. Reznik, G. É. Cirlin, I. V. Shtrom +5

   Maqola20182 iqtibos

   ABIABI:AkademIndex/2026.other.331822

5. Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy

   G. É. Cirlin, V. N. Petrov, S. A. Masalov +2

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000230

6. Fabrication of InAs quantum dots on silicon

   G. É. Cirlin, V. N. Petrov, В. Г. Дубровский +6

   MaqolaSurface and Thin Film PhenomenaTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000052