B. A. Matveev

6 ta ish

Fizika-Texnika Instituti

1. Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys

   M. Aydaraliev, N. V. Zotova, S.A. Karandashov +3

   Maqola19932 iqtibos

   ABIABI:AkademIndex/2026.other.609557

2. Distribution of Defects in InAs<sub>1-x-y</sub>Sb<sub>x</sub>P<sub>y</sub>-InAs DHs

   T. S. Argunova, R. N. Kyutt, B. A. Matveev +3

   MaqolaAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19910 iqtibos

   ABIABI:AkademIndex/1991.article.000041

3. Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures

   N. V. Zotova, S. A. Karandashev, B. A. Matveev +3

   MaqolaAdvanced Optical Sensing TechnologiesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000209

4. Fiber-optic detector using a mid-infrared diode laser and an acoustooptic modulator

   N. V. Zotova, S. A. Karandashev, L. A. Kulakova +4

   MaqolaPhotonic and Optical DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000213

5. Long-wavelength uncooled sources of λ=5–6 μ radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy

   M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

   MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000120

6. Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

   M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000255