M. A. Remennyĭ

3 ta ish

Fizika-Texnika Instituti

1. Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures

   N. V. Zotova, S. A. Karandashev, B. A. Matveev +3

   MaqolaAdvanced Optical Sensing TechnologiesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000209

2. Long-wavelength uncooled sources of λ=5–6 μ radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy

   M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

   MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000120

3. Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

   M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

   MaqolaSpectroscopy and Laser ApplicationsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000255