V. A. Vekshin

1 ta ish

Fizika-Texnika Instituti

1. Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

   V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000162